The realization of a viable semiconductor transistor and informationprocessing devices based on the electron spin has fueled intense basic researchof three key elements: injection, detection, and manipulation of spins in thesemiconductor channel. The inverse spin Hall effect (iSHE) detection of spinsinjected optically in a 2D GaAs and manipulated by a gate-voltage dependentinternal spin-orbit field has recently led to the experimental demonstration ofa spin transistor logic device. The aim of the work presented here is todemonstrate in one device the iSHE detection combined with an electrical spininjection and manipulation. We use a 3D GaAs channel for which efficientelectrical spin injection from Fe Schottky contacts has been demonstrated inprevious works. In order to experimentally separate the strong ordinary Halleffect signal from the iSHE in the semiconductor channel we developed epitaxialultrathin-Fe/GaAs contacts allowing for Hanle spin-precession measurements inapplied in-plane magnetic fields. Electrical injection and detection iscombined in our transistor structure with electrically manipulated spindistribution and spin current which, unlike the previously utilized electricalmanipulations of the spin-orbit field or ballistic spin transit time, is wellsuited for the diffusive 3D GaAs spin channel. The magnitudes and externalfield dependencies of the measured signals are quantitatively analyzed usingsimultaneous spin detection by the non-local spin valve effect and modeled bysolving the drift-diffusion and Hall-cross response equations for theparameters of the studied microstructure.
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